6
RF Device Data
Freescale Semiconductor
MRF6V10010NR4
TYPICAL CHARACTERISTICS
22
29
0
10
80
2
60
50
Pout, OUTPUT POWER (WATTS) PULSED
Figure 9. Pulsed Power Gain and Drain Efficiency
versus Output Power
G
ps
, POWER GAIN (dB)
η
D,
DRAIN EFFICIENCY (%)
ηD
28
468 1210
14
25_C
TC
=--30_C
85_C
Gps
40
27
26
VDD
=50Vdc,IDQ
= 10 mA, f = 1090 MHz
Pulse Width = 100
μsec, Duty Cycle = 20%
25
24
23
30
70
20
250
109
90
TJ, JUNCTION TEMPERATURE (°C)
Figure 10. MTTF versus Junction Temperature
This above graph displays calculated MTTF in hours when the device
is operated at VDD
=50Vdc,Pout
= 10 W Peak, Pulse Width = 100
μsec,
Duty Cycle = 20%, and
ηD
= 69%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
108
107
105
110 130 150 170 190
MTTF (HOURS)
210 230
106
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